IRF841 vs BUZ40B feature comparison

IRF841 National Semiconductor Corporation

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BUZ40B Infineon Technologies AG

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Drain Current-Max (ID) 8 A 8 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e3
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 75 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Base Number Matches 17 2
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 570 mJ
DS Breakdown Voltage-Min 500 V
Drain-source On Resistance-Max 0.8 Ω
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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