IRF9230R1
vs
2N6806
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Not Recommended
|
Active
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
LITTELFUSE INC
|
| Package Description |
FLANGE MOUNT, O-MBFM-P2
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
66 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
200 V
|
|
| Drain Current-Max (ID) |
6.5 A
|
6.5 A
|
| Drain-source On Resistance-Max |
0.92 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-3
|
|
| JESD-30 Code |
O-MBFM-P2
|
|
| JESD-609 Code |
e1
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
28 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN SILVER COPPER
|
TIN LEAD
|
| Terminal Form |
PIN/PEG
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
2
|
4
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
75 W
|
|
|
|
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