IRF9520
vs
IRF9521-010
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
unknown
|
unknown
|
| Avalanche Energy Rating (Eas) |
370 mJ
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
100 V
|
80 V
|
| Drain Current-Max (ID) |
6 A
|
6.8 A
|
| Drain-source On Resistance-Max |
0.6 Ω
|
0.6 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
24 A
|
27 A
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
9
|
2
|
| Rohs Code |
|
No
|
| ECCN Code |
|
EAR99
|
| JESD-609 Code |
|
e3
|
| Terminal Finish |
|
MATTE TIN OVER NICKEL
|
|
|
|
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