IRFBE30
vs
SSP4N80
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
SAMSUNG SEMICONDUCTOR INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
800 V
|
800 V
|
| Drain Current-Max (ID) |
4.1 A
|
4 A
|
| Drain-source On Resistance-Max |
3 Ω
|
3.5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
225
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
125 W
|
|
| Power Dissipation-Max (Abs) |
125 W
|
125 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
48
|
3
|
| Part Package Code |
|
SFM
|
| Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
| Pin Count |
|
3
|
|
|
|
Compare IRFBE30 with alternatives
Compare SSP4N80 with alternatives