IRFE110
vs
IRFE110-QR-JQR-B
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
TT ELECTRONICS PLC
|
Part Package Code |
LCC
|
|
Package Description |
CHIP CARRIER, R-CQCC-N15
|
CHIP CARRIER, R-CQCC-N16
|
Pin Count |
18
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
HIGH RELIABILITY
|
|
Avalanche Energy Rating (Eas) |
7 mJ
|
7 mJ
|
Case Connection |
SOURCE
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
3.5 A
|
3.5 A
|
Drain-source On Resistance-Max |
0.69 Ω
|
0.69 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CQCC-N15
|
R-CQCC-N16
|
Number of Elements |
1
|
1
|
Number of Terminals |
15
|
16
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
11 W
|
|
Pulsed Drain Current-Max (IDM) |
14 A
|
14 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
QUAD
|
QUAD
|
Time@Peak Reflow Temperature-Max (s) |
40
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
45 ns
|
|
Turn-on Time-Max (ton) |
40 ns
|
|
Base Number Matches |
1
|
2
|
|
|
|
Compare IRFE110 with alternatives
Compare IRFE110-QR-JQR-B with alternatives