IRFF333
vs
2N6800R1
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
SEMELAB LTD
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
350 V
|
400 V
|
| Drain Current-Max (ID) |
3 A
|
3 A
|
| Drain-source On Resistance-Max |
1.5 Ω
|
1 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
e1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
25 W
|
|
| Pulsed Drain Current-Max (IDM) |
12 A
|
12 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN SILVER COPPER
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
9
|
2
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
BCY
|
| Package Description |
|
CYLINDRICAL, O-MBCY-W3
|
| Pin Count |
|
2
|
| Additional Feature |
|
AVALANCHE RATED
|
|
|
|
Compare IRFF333 with alternatives
Compare 2N6800R1 with alternatives