IRFF9222 vs IRFF9222 feature comparison

IRFF9222 Harris Semiconductor

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IRFF9222 Rochester Electronics LLC

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer HARRIS SEMICONDUCTOR ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 290 mJ 290 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 2 A 2 A
Drain-source On Resistance-Max 2.4 Ω 2.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF TO-205AF
JESD-30 Code O-MBCY-W3 O-MBCY-W3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 8 A 8 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 195 ns
Turn-on Time-Max (ton) 90 ns
Base Number Matches 1 1
Pbfree Code No
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare IRFF9222 with alternatives

Compare IRFF9222 with alternatives