IRFH5020TRPBF vs IRFH5020TR2PBF feature comparison

IRFH5020TRPBF International Rectifier

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IRFH5020TR2PBF International Rectifier

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP INTERNATIONAL RECTIFIER CORP
Part Package Code QFN QFN
Package Description 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Pin Count 8 8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Avalanche Energy Rating (Eas) 320 mJ 320 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 5.1 A 5.1 A
Drain-source On Resistance-Max 0.055 Ω 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5 R-PDSO-N5
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 5 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 8.3 W 8.3 W
Pulsed Drain Current-Max (IDM) 63 A 63 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1