IRFHM8363TRPBF
vs
IRFHM8363TRPBF
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
End Of Life
|
Transferred
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
SMALL OUTLINE, S-PDSO-N8
|
SMALL OUTLINE, S-PDSO-N8
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
12 Weeks
|
|
Samacsys Manufacturer |
Infineon
|
|
Avalanche Energy Rating (Eas) |
29 mJ
|
29 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
10 A
|
11 A
|
Drain-source On Resistance-Max |
0.0149 Ω
|
0.0149 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
100 pF
|
|
JESD-30 Code |
S-PDSO-N8
|
S-PDSO-N8
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
19 W
|
19 W
|
Pulsed Drain Current-Max (IDM) |
116 A
|
116 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn)
|
MATTE TIN
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
40
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
QFN
|
Pin Count |
|
8
|
Additional Feature |
|
HIGH RELIABILITY
|
|
|
|
Compare IRFHM8363TRPBF with alternatives
Compare IRFHM8363TRPBF with alternatives