IRFP341 vs MTW16N40E feature comparison

IRFP341 Samsung Semiconductor

Buy Now Datasheet

MTW16N40E Rochester Electronics LLC

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC ROCHESTER ELECTRONICS LLC
Part Package Code TO-3P TO-247AE
Package Description TO-3P, 3 PIN CASE 340K-01, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 520 mJ 870 mJ
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 350 V 400 V
Drain Current-Max (ID) 10 A 16 A
Drain-source On Resistance-Max 0.55 Ω 0.24 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 40 A 56 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 111 ns
Turn-on Time-Max (ton) 62 ns
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Manufacturer Package Code CASE 340K-01
Additional Feature HIGH VOLTAGE
Case Connection DRAIN
JEDEC-95 Code TO-247AE
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish TIN LEAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare IRFP341 with alternatives

Compare MTW16N40E with alternatives