IRFR1205 vs BUZ101SL feature comparison

IRFR1205 Infineon Technologies AG

Buy Now Datasheet

BUZ101SL Infineon Technologies AG

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description PLASTIC, DPAK-3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 210 mJ 90 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 20 A 20 A
Drain-source On Resistance-Max 0.027 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A 80 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Part Package Code TO-220AB
Pin Count 3
Factory Lead Time 4 Weeks
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 55 W

Compare IRFR1205 with alternatives

Compare BUZ101SL with alternatives