IRFR224TRL vs IRFR224 feature comparison

IRFR224TRL International Rectifier

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IRFR224 Samsung Semiconductor

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP SAMSUNG SEMICONDUCTOR INC
Package Description SMALL OUTLINE, R-PSSO-G2 DPAK-3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 130 mJ
Case Connection DRAIN
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 250 V 250 V
Drain Current-Max (ID) 3.8 A 3.8 A
Drain-source On Resistance-Max 1.1 Ω 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 42 W
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Pin Count 3
Power Dissipation-Max (Abs) 42 W

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