IRFR3708 vs RJK0365DPA-02-J0 feature comparison

IRFR3708 Infineon Technologies AG

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RJK0365DPA-02-J0 Renesas Electronics Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PDSO-N5
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 213 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.0125 Ω 0.0127 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 R-PDSO-N5
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 244 A 120 A
Surface Mount YES YES
Terminal Form GULL WING NO LEAD
Terminal Position SINGLE DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 5 3
Pin Count 8
JESD-609 Code e4
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 30 W
Qualification Status Not Qualified
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)

Compare IRFR3708 with alternatives

Compare RJK0365DPA-02-J0 with alternatives