IRFR5305TRPBF vs AUIRFR5305TR feature comparison

IRFR5305TRPBF Infineon Technologies AG

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AUIRFR5305TR Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 280 mJ 280 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 31 A 31 A
Drain-source On Resistance-Max 0.065 Ω 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 110 W 110 W
Pulsed Drain Current-Max (IDM) 110 A 110 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Package Description SMALL OUTLINE, R-PSSO-G2
Factory Lead Time 52 Weeks

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