IRFR92209A vs SIHFR9220TRR-GE3 feature comparison

IRFR92209A Harris Semiconductor

Buy Now Datasheet

SIHFR9220TRR-GE3 Vishay Siliconix

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer HARRIS SEMICONDUCTOR VISHAY SILICONIX
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 0.6 A 3.6 A
Drain-source On Resistance-Max 1.5 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 42 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 50 ns
Turn-on Time-Max (ton) 50 ns
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-252
Pin Count 3
Avalanche Energy Rating (Eas) 310 mJ
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 14 A
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare IRFR92209A with alternatives

Compare SIHFR9220TRR-GE3 with alternatives