IRFS31N20D
vs
IRFS23N20DTRL
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
|
| Package Description |
D2PAK-3/2
|
|
| Reach Compliance Code |
unknown
|
|
| ECCN Code |
EAR99
|
|
| Samacsys Manufacturer |
Infineon
|
|
| Avalanche Energy Rating (Eas) |
420 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE
|
|
| DS Breakdown Voltage-Min |
200 V
|
|
| Drain Current-Max (ID) |
31 A
|
|
| Drain-source On Resistance-Max |
0.082 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JESD-30 Code |
R-PSSO-G2
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Pulsed Drain Current-Max (IDM) |
124 A
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
|
|
|
|
Compare IRFS31N20D with alternatives