IRFSL11N50A vs IRFSL9N60APBF feature comparison

IRFSL11N50A International Rectifier

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IRFSL9N60APBF International Rectifier

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP INTERNATIONAL RECTIFIER CORP
Part Package Code TO-262AA TO-262AA
Package Description IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Pin Count 3 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 390 mJ 290 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 600 V
Drain Current-Max (ID) 11 A 9.2 A
Drain-source On Resistance-Max 0.55 Ω 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA TO-262AA
JESD-30 Code R-PSIP-T3 R-PSIP-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 190 W 170 W
Pulsed Drain Current-Max (IDM) 44 A 37 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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