IRFU5305 vs MTB30P06VT4G feature comparison

IRFU5305 Infineon Technologies AG

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MTB30P06VT4G onsemi

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Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG ONSEMI
Package Description IPAK-3 D2PAK-3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon onsemi
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 280 mJ 450 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 60 V
Drain Current-Max (ID) 31 A 30 A
Drain-source On Resistance-Max 0.065 Ω 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A 105 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb) TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Pbfree Code Yes
Part Package Code D2PAK 2 LEAD
Pin Count 3
Manufacturer Package Code 418B-04
Feedback Cap-Max (Crss) 310 pF
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 125 W
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 80 ns

Compare IRFU5305 with alternatives

Compare MTB30P06VT4G with alternatives