IRFY9130M
vs
IRFY9130CM
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SEMELAB LTD
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
TO-257AB
|
|
| Package Description |
FLANGE MOUNT, S-MSFM-P3
|
HERMETIC SEALED, TO-257AA, 3 PIN
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
SOURCE
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
11.2 A
|
11.2 A
|
| Drain-source On Resistance-Max |
0.3 Ω
|
0.3 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-257AB
|
TO-257AA
|
| JESD-30 Code |
S-MSFM-P3
|
S-XSFM-P3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
UNSPECIFIED
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
4
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Avalanche Energy Rating (Eas) |
|
400 mJ
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
75 W
|
| Pulsed Drain Current-Max (IDM) |
|
44 A
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRFY9130M with alternatives
Compare IRFY9130CM with alternatives