IRFY9130M
vs
IRFY9130M
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
SEMELAB LTD
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code |
TO-257AB
|
TO-257AA
|
Package Description |
FLANGE MOUNT, S-MSFM-P3
|
FLANGE MOUNT, S-XSFM-P3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
SOURCE
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
11.2 A
|
11.2 A
|
Drain-source On Resistance-Max |
0.3 Ω
|
0.3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-257AB
|
TO-257AA
|
JESD-30 Code |
S-MSFM-P3
|
S-XSFM-P3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
UNSPECIFIED
|
Package Shape |
SQUARE
|
SQUARE
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
PIN/PEG
|
PIN/PEG
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
12
|
HTS Code |
|
8541.29.00.95
|
Additional Feature |
|
HIGH RELIABILITY
|
Avalanche Energy Rating (Eas) |
|
400 mJ
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation Ambient-Max |
|
45 W
|
Power Dissipation-Max (Abs) |
|
45 W
|
Pulsed Drain Current-Max (IDM) |
|
44 A
|
Terminal Finish |
|
TIN LEAD
|
Transistor Application |
|
SWITCHING
|
Turn-off Time-Max (toff) |
|
280 ns
|
Turn-on Time-Max (ton) |
|
200 ns
|
|
|
|
Compare IRFY9130M with alternatives
Compare IRFY9130M with alternatives