IRFZ24N,127 vs IRFZ24NPBF feature comparison

IRFZ24N,127 NXP Semiconductors

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IRFZ24NPBF NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature ESD PROTECTED ESD PROTECTED
Avalanche Energy Rating (Eas) 30 mJ 30 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 17 A 17 A
Drain-source On Resistance-Max 0.07 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 68 A 68 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3

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