IRFZ34VSPBF vs RFD16N03LSM9A feature comparison

IRFZ34VSPBF International Rectifier

Buy Now Datasheet

RFD16N03LSM9A Harris Semiconductor

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP HARRIS SEMICONDUCTOR
Part Package Code D2PAK
Package Description PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 81 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 30 V
Drain Current-Max (ID) 30 A 16 A
Drain-source On Resistance-Max 0.028 Ω 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 90 W
Turn-off Time-Max (toff) 80 ns
Turn-on Time-Max (ton) 120 ns

Compare IRFZ34VSPBF with alternatives

Compare RFD16N03LSM9A with alternatives