IRFZ44NPBF vs IRFZ44N feature comparison

IRFZ44NPBF Infineon Technologies AG

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IRFZ44N NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks, 3 Days
Samacsys Manufacturer Infineon NXP
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE ESD PROTECTED
Avalanche Energy Rating (Eas) 150 mJ 110 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 49 A 49 A
Drain-source On Resistance-Max 0.0175 Ω 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 94 W
Pulsed Drain Current-Max (IDM) 160 A 160 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 4
Moisture Sensitivity Level 1

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