IRG4BC30UDPBF vs HGTG12N60C3D feature comparison

IRG4BC30UDPBF International Rectifier

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HGTG12N60C3D Harris Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP HARRIS SEMICONDUCTOR
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 23 A 24 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 130 ns 275000000000 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-220AB TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 100 W 104 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN OVER NICKEL Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 300 ns 270 ns
Turn-on Time-Nom (ton) 62 ns 14 ns
Base Number Matches 2 4
Additional Feature LOW CONDUCTION LOSS, HYPER FAST RECOVERY

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