IRG4BC40WPBF vs HGTD7N60C3S9A feature comparison

IRG4BC40WPBF Infineon Technologies AG

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HGTD7N60C3S9A onsemi

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Rohs Code Yes
Part Life Cycle Code Obsolete End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG ONSEMI
Package Description LEAD FREE PACKAGE-3 TO-252AA, 3 PIN
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Date Of Intro 1997-06-16
Samacsys Manufacturer Infineon onsemi
Additional Feature LOW CONDUCTION LOSS RC-IGBT
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 40 A 14 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
Fall Time-Max (tf) 110 ns 275 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-220AB TO-252AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 160 W 60 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 174 ns 490 ns
Turn-on Time-Nom (ton) 49 ns 20 ns
Base Number Matches 1 1
Pbfree Code Yes
Manufacturer Package Code 369AS
Factory Lead Time 4 Weeks
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -40 °C
Terminal Finish Matte Tin (Sn) - annealed
Turn-off Time-Max (toff) 675 ns
VCEsat-Max 2 V

Compare IRG4BC40WPBF with alternatives

Compare HGTD7N60C3S9A with alternatives