IRG4BC40WS vs HGT1S12N60A4DS9A feature comparison

IRG4BC40WS International Rectifier

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HGT1S12N60A4DS9A onsemi

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP ON SEMICONDUCTOR
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 40 A 54 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 110 ns 95 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 160 W 167 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 294 ns 180 ns
Turn-on Time-Nom (ton) 48 ns 33 ns
Base Number Matches 2 3
Date Of Intro 2017-11-08
Operating Temperature-Min -55 °C
Turn-off Time-Max (toff) 265 ns
VCEsat-Max 2.7 V

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