IRG4PC40KDPBF vs HGTG20N100D2 feature comparison

IRG4PC40KDPBF Infineon Technologies AG

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HGTG20N100D2 Harris Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG HARRIS SEMICONDUCTOR
Package Description LEAD FREE PACKAGE-3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 42 A 34 A
Collector-Emitter Voltage-Max 600 V 1000 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Fall Time-Max (tf) 150 ns 680 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-247AC TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 160 W 150 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN OVER NICKEL TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 360 ns 500 ns
Turn-on Time-Nom (ton) 89 ns 100 ns
Base Number Matches 1 1
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 150 W
Turn-off Time-Max (toff) 650 ns
VCEsat-Max 3.8 V

Compare IRG4PC40KDPBF with alternatives

Compare HGTG20N100D2 with alternatives