IRG4RC10KTRLPBF vs HGTD3N60B3 feature comparison

IRG4RC10KTRLPBF Infineon Technologies AG

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HGTD3N60B3 Harris Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG HARRIS SEMICONDUCTOR
Package Description DPAK-3 PLASTIC PACKAGE-3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 9 A 7 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
JEDEC-95 Code TO-252AA TO-251AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES NO
Terminal Finish MATTE TIN OVER NICKEL TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 417 ns 220 ns
Turn-on Time-Nom (ton) 38 ns 16 ns
Base Number Matches 2 3
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Case Connection COLLECTOR
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
Power Dissipation-Max (Abs) 33 W
Qualification Status Not Qualified

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