IRG4RC10KTRLPBF vs HGTD3N60B3S9A feature comparison

IRG4RC10KTRLPBF Infineon Technologies AG

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HGTD3N60B3S9A Fairchild Semiconductor Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Package Description DPAK-3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 9 A 7 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
JEDEC-95 Code TO-252AA TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES YES
Terminal Finish MATTE TIN OVER NICKEL TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 417 ns 335 ns
Turn-on Time-Nom (ton) 38 ns 34 ns
Base Number Matches 2 1
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Fall Time-Max (tf) 175 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
Power Dissipation-Max (Abs) 33.3 W
Qualification Status Not Qualified

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