IRLML6402TRPBF vs IRLML6402GPBF feature comparison

IRLML6402TRPBF Infineon Technologies AG

Buy Now Datasheet

IRLML6402GPBF Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SOT-23, 3 PIN LEAD FREE, MICRO-3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 11 mJ 11 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.7 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 110 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1.3 W
Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 22 A 22 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 2 1

Compare IRLML6402GPBF with alternatives