IRLMS1902TR vs IRLMS1902PBF feature comparison

IRLMS1902TR Infineon Technologies AG

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IRLMS1902PBF Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description MICRO-6 LEAD FREE, MICRO-6
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 3.2 A 3.2 A
Drain-source On Resistance-Max 0.1 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A 18 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.78 W
Time@Peak Reflow Temperature-Max (s) 30

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