IRLU120 vs IRLU120N feature comparison

IRLU120 Samsung Semiconductor

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IRLU120N Infineon Technologies AG

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Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INFINEON TECHNOLOGIES AG
Package Description IN-LINE, R-PSIP-T3 IPAK-3
Pin Count 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 7.9 A 10 A
Drain-source On Resistance-Max 0.4 Ω 0.225 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 42 W
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 32 A 35 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 75 ns
Turn-on Time-Max (ton) 42 ns
Base Number Matches 5 1
Rohs Code No
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 85 mJ
Case Connection DRAIN
JEDEC-95 Code TO-251AA
JESD-609 Code e0
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare IRLU120N with alternatives