IRLU120
vs
IRLU120N
feature comparison
Part Life Cycle Code |
Obsolete
|
Not Recommended
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
INFINEON TECHNOLOGIES AG
|
Package Description |
IN-LINE, R-PSIP-T3
|
IPAK-3
|
Pin Count |
3
|
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
AVALANCHE RATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
7.9 A
|
10 A
|
Drain-source On Resistance-Max |
0.4 Ω
|
0.225 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
42 W
|
|
Power Dissipation-Max (Abs) |
42 W
|
|
Pulsed Drain Current-Max (IDM) |
32 A
|
35 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
75 ns
|
|
Turn-on Time-Max (ton) |
42 ns
|
|
Base Number Matches |
5
|
1
|
Rohs Code |
|
No
|
Samacsys Manufacturer |
|
Infineon
|
Avalanche Energy Rating (Eas) |
|
85 mJ
|
Case Connection |
|
DRAIN
|
JEDEC-95 Code |
|
TO-251AA
|
JESD-609 Code |
|
e0
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IRLU120 with alternatives
Compare IRLU120N with alternatives