IRLZ24N
vs
HUF75309D3ST
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
ROCHESTER ELECTRONICS LLC
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
68 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
18 A
|
19 A
|
Drain-source On Resistance-Max |
0.075 Ω
|
0.07 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-252AA
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
45 W
|
|
Power Dissipation-Max (Abs) |
45 W
|
|
Pulsed Drain Current-Max (IDM) |
72 A
|
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
TIN LEAD
|
MATTE TIN
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
49
|
2
|
Pbfree Code |
|
Yes
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IRLZ24N with alternatives
Compare HUF75309D3ST with alternatives