ISL73096EHVX
vs
5962F0721804V9A
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
RENESAS ELECTRONICS CORP
|
| Part Package Code |
DIE
|
|
| Package Description |
,
|
,
|
| Manufacturer Package Code |
ISLDUMMY00
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.40
|
8541.29.00.40
|
| Samacsys Manufacturer |
Renesas Electronics
|
|
| Additional Feature |
LOW NOISE
|
LOW NOISE
|
| Collector Current-Max (IC) |
0.0113 A
|
0.0113 A
|
| Collector-Emitter Voltage-Max |
8 V
|
8 V
|
| Configuration |
SEPARATE, 5 ELEMENTS
|
SEPARATE, 5 ELEMENTS
|
| DC Current Gain-Min (hFE) |
40
|
40
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-XUUC-N16
|
R-XUUC-N16
|
| JESD-609 Code |
e4
|
e4
|
| Number of Elements |
5
|
5
|
| Number of Terminals |
16
|
16
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
UNCASED CHIP
|
UNCASED CHIP
|
| Polarity/Channel Type |
NPN AND PNP
|
NPN AND PNP
|
| Power Dissipation Ambient-Max |
1.25 W
|
1.25 W
|
| Reference Standard |
MIL-38535; RH - 100K Rad(Si)
|
MIL-38535; RH - 300K Rad(Si)
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
GOLD
|
Gold (Au)
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
8000 MHz
|
8000 MHz
|
| VCEsat-Max |
0.5 V
|
0.5 V
|
| Base Number Matches |
1
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Qualification Status |
|
Not Qualified
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|