IXFH12N100F vs STD3NA50T4 feature comparison

IXFH12N100F IXYS Corporation

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STD3NA50T4 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer IXYS CORP STMICROELECTRONICS
Part Package Code TO-247 TO-252AA
Package Description PLASTIC PACKAGE-3 DPAK-3
Pin Count 3 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ 40 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V 500 V
Drain Current-Max (ID) 12 A 2.7 A
Drain-source On Resistance-Max 1.05 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-252AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 48 A 10.8 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Power Dissipation-Max (Abs) 50 W

Compare IXFH12N100F with alternatives

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