IXFH24N80P vs APT24M80S feature comparison

IXFH24N80P Littelfuse Inc

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APT24M80S Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer LITTELFUSE INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 1500 mJ 975 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V 800 V
Drain Current-Max (ID) 24 A 25 A
Drain-source On Resistance-Max 0.4 Ω 0.39 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 650 W
Pulsed Drain Current-Max (IDM) 55 A 85 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 26 Weeks

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