IXFH80N65X2
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
|
| Ihs Manufacturer |
IXYS CORP
|
|
| Reach Compliance Code |
not_compliant
|
|
| ECCN Code |
EAR99
|
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
3000 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
650 V
|
|
| Drain Current-Max (ID) |
80 A
|
|
| Drain-source On Resistance-Max |
0.038 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| Feedback Cap-Max (Crss) |
1.6 pF
|
|
| JEDEC-95 Code |
TO-247AD
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
890 W
|
|
| Pulsed Drain Current-Max (IDM) |
160 A
|
|
| Surface Mount |
NO
|
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
2
|
|
|
|
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