IXFN150N10
vs
BUK416-100BE
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
LITTELFUSE INC
|
NXP SEMICONDUCTORS
|
| Package Description |
FLANGE MOUNT, R-PUFM-X4
|
FLANGE MOUNT, R-PUFM-D4
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Samacsys Manufacturer |
LITTELFUSE
|
|
| Additional Feature |
AVALANCHE RATED
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
150 A
|
100 A
|
| Drain-source On Resistance-Max |
0.012 Ω
|
0.016 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PUFM-X4
|
R-PUFM-D4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
520 W
|
|
| Power Dissipation-Max (Abs) |
520 W
|
|
| Pulsed Drain Current-Max (IDM) |
560 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
NICKEL
|
|
| Terminal Form |
UNSPECIFIED
|
SOLDER LUG
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare IXFN150N10 with alternatives
Compare BUK416-100BE with alternatives