IXFN27N80
vs
IXFN27N80Q
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
IXYS CORP
|
IXYS CORP
|
Package Description |
MINIBLOC-4
|
MINIBLOC-4
|
Pin Count |
4
|
4
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
Case Connection |
ISOLATED
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
800 V
|
800 V
|
Drain Current-Max (ID) |
27 A
|
27 A
|
Drain-source On Resistance-Max |
0.3 Ω
|
0.32 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PUFM-X4
|
R-PUFM-X4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
520 W
|
|
Power Dissipation-Max (Abs) |
520 W
|
|
Pulsed Drain Current-Max (IDM) |
108 A
|
108 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
NICKEL
|
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Avalanche Energy Rating (Eas) |
|
2500 mJ
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IXFN27N80 with alternatives
Compare IXFN27N80Q with alternatives