IXFP16N50P3
vs
APT5030AVR
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
IXYS CORP
|
ADVANCED POWER TECHNOLOGY INC
|
Package Description |
PLASTIC PACKAGE-3
|
FLANGE MOUNT, O-MBFM-P2
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
300 mJ
|
960 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
16 A
|
14.7 A
|
Drain-source On Resistance-Max |
0.36 Ω
|
0.3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-204AE
|
JESD-30 Code |
R-PSFM-T3
|
O-MBFM-P2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
METAL
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
330 W
|
|
Pulsed Drain Current-Max (IDM) |
40 A
|
58.8 A
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
PIN/PEG
|
Terminal Position |
SINGLE
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Part Package Code |
|
BFM
|
Pin Count |
|
2
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Qualification Status |
|
Not Qualified
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IXFP16N50P3 with alternatives
Compare APT5030AVR with alternatives