IXTA180N10T7
vs
IXTA180N10T
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
LITTELFUSE INC
|
LITTELFUSE INC
|
Package Description |
,
|
TO-263, 3/2 PIN
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
LITTELFUSE
|
LITTELFUSE
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED, ULTRA LOW RESISTANCE
|
Avalanche Energy Rating (Eas) |
750 mJ
|
750 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
180 A
|
180 A
|
Drain-source On Resistance-Max |
0.0064 Ω
|
0.0064 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
162 pF
|
162 pF
|
JEDEC-95 Code |
TO-263
|
TO-263AB
|
JESD-30 Code |
R-PSSO-G6
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
6
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
480 W
|
480 W
|
Pulsed Drain Current-Max (IDM) |
450 A
|
450 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn)
|
Matte Tin (Sn)
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
10
|
10
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
3
|
Rohs Code |
|
Yes
|
|
|
|
Compare IXTA180N10T7 with alternatives
Compare IXTA180N10T with alternatives