JAN1N5550
vs
1N5550
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
GENERAL SEMICONDUCTOR INC
|
| Package Description |
SIMILAR TO DO-41, 2 PIN
|
GLASS, G4, 2 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Samacsys Manufacturer |
Microsemi Corporation
|
|
| Application |
POWER
|
EFFICIENCY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-XALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Pk Forward Current-Max |
100 A
|
100 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
5 A
|
3 A
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500/420G
|
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
3
|
1
|
| Pin Count |
|
2
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Reverse Recovery Time-Max |
|
2 µs
|
|
|
|
Compare JAN1N5550 with alternatives
Compare 1N5550 with alternatives