JAN1N6116A
vs
1N6116A
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
BKC SEMICONDUCTORS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Min |
24.3 V
|
24.3 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
3 W
|
3 W
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500/516
|
|
| Rep Pk Reverse Voltage-Max |
20.6 V
|
20.6 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
9
|
11
|
| Rohs Code |
|
No
|
| Breakdown Voltage-Nom |
|
27 V
|
| Clamping Voltage-Max |
|
39.2 V
|
| JESD-609 Code |
|
e0
|
| Reverse Current-Max |
|
1 µA
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
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