JAN2N2222AUB vs JANS2N2222AUB feature comparison

JAN2N2222AUB Microsemi Corporation

Buy Now Datasheet

JANS2N2222AUB Microsemi Corporation

Buy Now Datasheet
Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description CERAMIC PACKAGE-4
Pin Count 4 4
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Samacsys Manufacturer Microsemi Corporation Microsemi Corporation
Collector Current-Max (IC) 0.8 A 0.8 A
Collector-Base Capacitance-Max 8 pF
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 30
JESD-30 Code R-XDSO-N3 R-CDSO-N3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 200 °C 200 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.5 W
Power Dissipation-Max (Abs) 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-PRF-19500 MIL-19500/255
Surface Mount YES YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 300 ns 300 ns
Turn-on Time-Max (ton) 35 ns 35 ns
VCEsat-Max 1 V
Base Number Matches 1 3
Transition Frequency-Nom (fT) 250 MHz

Compare JAN2N2222AUB with alternatives

Compare JANS2N2222AUB with alternatives