JAN2N2907 vs JANTXV2N2907L feature comparison

JAN2N2907 Raytheon Semiconductor

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JANTXV2N2907L Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer RAYTHEON SEMICONDUCTOR NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector-Emitter Voltage-Max 40 V 60 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 100
JEDEC-95 Code TO-18 TO-206AA
JESD-30 Code O-MBCY-W3 O-MBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Reference Standard MIL MIL-19500/291
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 45 ns
Base Number Matches 6 1
Pbfree Code No
Part Package Code BCY
Package Description CYLINDRICAL, O-MBCY-W3
Pin Count 3
Collector Current-Max (IC) 0.6 A

Compare JAN2N2907 with alternatives

Compare JANTXV2N2907L with alternatives