JAN2N5416
vs
2N5416S
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Base Capacitance-Max |
15 pF
|
|
| Collector-Emitter Voltage-Max |
300 V
|
200 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| JEDEC-95 Code |
TO-205AD
|
TO-39
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
10 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
NOT SPECIFIED
|
GOLD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
5
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Samacsys Manufacturer |
|
Microsemi Corporation
|
| JESD-609 Code |
|
e4
|
| Operating Temperature-Min |
|
-65 °C
|
| Power Dissipation-Max (Abs) |
|
10 W
|
| Turn-off Time-Max (toff) |
|
10000 ns
|
| Turn-on Time-Max (ton) |
|
1000 ns
|
|
|
|
Compare JAN2N5416 with alternatives
Compare 2N5416S with alternatives