JAN2N6350 vs JANTXV2N6350 feature comparison

JAN2N6350 New England Semiconductor

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JANTXV2N6350 New England Semiconductor

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR NEW ENGLAND SEMICONDUCTOR
Package Description TO-33, 4 PIN TO-33, 4 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 5 A 5 A
Configuration DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 2000 2000
JEDEC-95 Code TO-33 TO-33
JESD-30 Code O-MBCY-W4 O-MBCY-W4
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 200 °C 200 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/472B MIL-19500/472B
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 50 MHz 50 MHz
Turn-off Time-Max (toff) 1200 ns 1200 ns
Turn-on Time-Max (ton) 500 ns 500 ns
Base Number Matches 9 9