JAN2N6800
vs
IRFP332
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
SAMSUNG SEMICONDUCTOR INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
400 V
|
400 V
|
| Drain Current-Max (ID) |
3 A
|
4.5 A
|
| Drain-source On Resistance-Max |
1 Ω
|
1.5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-205AF
|
|
| JESD-30 Code |
O-MBCY-W3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
14 A
|
18 A
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
1
|
| Part Package Code |
|
TO-3P
|
| Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
| Pin Count |
|
2
|
| HTS Code |
|
8541.29.00.95
|
| Avalanche Energy Rating (Eas) |
|
290 mJ
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation Ambient-Max |
|
75 W
|
| Power Dissipation-Max (Abs) |
|
75 W
|
| Turn-off Time-Max (toff) |
|
80 ns
|
| Turn-on Time-Max (ton) |
|
46 ns
|
|
|
|
Compare JAN2N6800 with alternatives
Compare IRFP332 with alternatives