JANS1N5622
vs
1N5622R
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICROSS COMPONENTS
|
MICROSEMI CORP
|
| Reach Compliance Code |
compliant
|
unknown
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Application |
GENERAL PURPOSE
|
|
| Breakdown Voltage-Min |
1100 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.5 V
|
|
| JESD-30 Code |
E-XALF-W2
|
O-LALF-W2
|
| Non-rep Pk Forward Current-Max |
30 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
2 A
|
1 A
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ELLIPTICAL
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-PRF-19500
|
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
|
| Reverse Current-Max |
0.5 µA
|
|
| Reverse Recovery Time-Max |
2 µs
|
2 µs
|
| Reverse Test Voltage |
1000 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
6
|
2
|
| Package Description |
|
O-LALF-W2
|
| Pin Count |
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare JANS1N5622 with alternatives
Compare 1N5622R with alternatives