JANSP2N3700
vs
2N3700
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
DIGITRON SEMICONDUCTORS
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Qualification Status |
Not Qualified
|
|
| Base Number Matches |
2
|
40
|
| HTS Code |
|
8541.21.00.95
|
| Collector Current-Max (IC) |
|
1 A
|
| Collector-Base Capacitance-Max |
|
12 pF
|
| Collector-Emitter Voltage-Max |
|
80 V
|
| Configuration |
|
SINGLE
|
| DC Current Gain-Min (hFE) |
|
15
|
| JEDEC-95 Code |
|
TO-18
|
| JESD-30 Code |
|
O-MBCY-W3
|
| JESD-609 Code |
|
e0
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
200 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Polarity/Channel Type |
|
NPN
|
| Power Dissipation Ambient-Max |
|
0.5 W
|
| Power Dissipation-Max (Abs) |
|
1 W
|
| Surface Mount |
|
NO
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Element Material |
|
SILICON
|
| VCEsat-Max |
|
0.5 V
|
|
|
|